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| SEMiX904GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES Tj = 150C ICRM = 2xICnom VCC = 600V VGE 20V Tj = 125C VCES 1200V Tc = 25C Tc = 80C 1200 821 572 1200 -20 ... 20 10 -40 ... 150 Tc = 25C Tc = 80C 752 516 1200 3600 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 60s 4000 V A A A V s C A A A A C A C V Conditions Values Unit SEMiX(R)4s Trench IGBT Modules tpsc Tj Inverse diode IF Tj = 150C IFRM = 2xIFnom tp = 10ms, half sine wave, Tj = 25C SEMiX904GB126HDs Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT ICnom = 600A VGE = 15V chiplevel Tj = 25C Tj = 125C Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C Tj = 125C f = 1MHz f = 1MHz f = 1MHz 43.1 2.25 1.95 4800 1.25 440 85 60 710 130 88 0.05 1.7 2.00 1 0.9 1.2 1.8 5.8 0.12 2.1 2.45 1.2 1.1 1.5 2.3 6.5 0.36 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperatur limited to TC=125C max. * Not for new design VGE=VCE, IC = 24mA VGE = 0V VCE = 1200V VCE = 25V VGE = 0V VGE = - 8 V...+ 15 V Tj = 25C VCC = 600V ICnom = 600A Tj = 125C RG on = 1.6 RG off = 1.6 GB (c) by SEMIKRON 03.04.2008 1 SEMiX904GB126HDs Characteristics Symbol Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C rF Tj = 25C Tj = 125C IFnom = 600A Tj = 125C di/dtoff = 8400A/s T = 125C j VGE = -15V Tj = 125C VCC = 600V per diode 0.9 0.7 0.8 1.2 min. typ. 1.6 1.6 1 0.8 1.0 1.3 625 165 75 max. 1.8 1.8 1.1 0.9 1.2 1.5 Unit V V V V m m A C mJ Inverse diode VF = VEC IFnom = 600A VGE = 0V chiplevel VF0 SEMiX(R)4s Trench IGBT Modules IRRM Qrr Err Rth(j-c)D Module 0.081 22 K/W nH m m K/W SEMiX904GB126HDs Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 LCE RCC'+EE' Rth(c-s) Ms Mt w Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25C TC = 125C 0.7 1 0.03 5 5 400 0,493 5% 3550 2% Nm Nm g k K Typical Applications * AC inverter drives * UPS * Electronic Welding Remarks * Case temperatur limited to TC=125C max. * Not for new design GB 2 03.04.2008 (c) by SEMIKRON SEMiX904GB126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON 03.04.2008 3 SEMiX904GB126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 03.04.2008 (c) by SEMIKRON SEMiX904GB126HDs SEMiX 4s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON 03.04.2008 5 |
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